Results are obtained for a source charge above the semiconductor, within the semiconductor, and on the semiconductor surface, but we emphasize the last case. This includes the screening effects both of the plasma of free carriers due to bulk donors or acceptors, and of the bound polarizable charge associated with the bulk dielectric, but does not include free charge from intrinsic or extrinsic surface states. It employs the linearized version of the Debye-Hückel (or, equivalently, the Thomas-Fermi) approximation. We have developed a semimicroscopic theory for the electrostatic potential due to an isolated charge near a semiconductor surface whose surface states do not contribute free carriers.
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